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| IXFK 32N60 IXFK 36N60 Preliminary Data IXFN 32N60 IXFN 36N60 ID25 RDS(on) 0.18 0.25 t rr 250ns 250ns VDSS HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A TO-264 AA (IXFK) Symbol VDSS VDGR V GS VGSM I D25 I DM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMSt = 1 min IISOL 1 mAt = 1 s Mounting torque Terminal connection torque -55 ... 300 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C, Chip capability TC = 25C, pulse width limited by TJM TC = 25C TC = 25C I S IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings IXFK IXFN 600 600 20 30 32N60 32 36N60 36 32N60 128 36N60 144 20 30 5 500 -55 ... 600 600 20 30 32 36 128 144 20 30 5 520 +150 150 +150 2500 3000 V V V V A A A A A mJ V/ns W C C C C V~ V~ Nm/lb.in. Nm/lb.in. g Features * International standard packages * JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays Advantages Easy to mount * Space savings * High power density * G D S D (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 0.9/6 1.5/13 - 1.5/13 10 30 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 600 2 4.5 200 TJ = 25C TJ = 125C 400 2 0.18 0.25 V V nA A mA VDSS VGH(th) I GSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 36N60 Pulse test, t 300 s, duty cycle 2 % 32N60 (c)1996 IXYS Corporation. All rights reserved. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 92807G (01/96) IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXFK 32N60 IXFK 36N60 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 36 9000 VGS = 0 V, VDS = 25 V, f = 1 MHz 840 280 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 (External), 45 100 60 325 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 60 120 TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 0.15 0.24 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T IXFN 32N60 IXFN 36N60 TO-264 AA Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK V DS = 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS IS I SM VSD t rr I RM Test Conditions VGS = 0 VGS = 0 Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 36N60 32N60 36N60 32N60 36 32 144 128 1.5 A A A A V Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 miniBLOC, SOT-227 B Repetitive; pulse width limited by TJM IF = IS A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V 250 20 ns A M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 4,850,072 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 4,850,072 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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